28-56-Bit Datasheet | Specifications & PDF Download

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NXP

P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz

INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.
Rating: 1 (5 votes)
Advanced Micro Devices

28F256 - 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory

FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce.
Rating: 1 (5 votes)
Samsung semiconductor

K4R571669D - 256/288Mbit RDRAM(D-die)

K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
Rating: 1 (4 votes)
Samsung

K9XXG16UXM-K - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Rating: 1 (4 votes)
Texas Instruments

SN74SSQE32882 - 28-BIT TO 56-BIT REGISTERED BUFFER

SN74SSQE32882 www.ti.com .
Rating: 1 (4 votes)
NXP

80C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz

INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.
Rating: 1 (3 votes)
CatalystSemiconductor

25C128 - 128K/256K-Bit SPI Serial CMOS E2PROM

CAT25C128/256 128K/256K-Bit SPI Serial CMOS E2PROM FEATURES s 5 MHz SPI Compatible s 1.8 to 6.0 Volt Operation s Hardware and Software Protection s Ze.
Rating: 1 (3 votes)
Intel

P28F002BC - 2-MBIT (256K x 8) BOOT BLOCK FLASH MEMORY

E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n.
Rating: 1 (3 votes)
Integrated Device Technology

IDT71128 - CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout

CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout Features x x IDT71128 Description The IDT71128 is a 1,048,576-bit high-speed static RAM or.
Rating: 1 (3 votes)
Samsung semiconductor

K7A401809A - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

K7A403609A K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
Rating: 1 (3 votes)
Samsung semiconductor

K9K2G08Q0M-Y - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.
Rating: 1 (3 votes)
Infineon

HYR1825640G-745 - Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general pu.
Rating: 1 (3 votes)
Samsung

K9K2G16Q0M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Rating: 1 (3 votes)
Samsung

K9K2G16Q0M-YCB0 - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.
Rating: 1 (3 votes)
Samsung

K9K2G16U0M-PCB0 - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0.
Rating: 1 (3 votes)
Samsung

K9XXG08UXM-Y - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Rating: 1 (3 votes)
Samsung

K9XXG16UXM-Y - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.
Rating: 1 (3 votes)
ST Microelectronics

M29W200BT - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

M29W200BT M29W200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VO.
Rating: 1 (3 votes)
Mitsubishi

M5M5V5636GP16 - 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

2001.July Rev.0.1 MITSUBISHI LSIs Advanced Information Notice: This is not final specification. Some parametric limits are subject to change. M5M5V.
Rating: 1 (3 votes)
Motorola

MCM63P818 - 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63P736/D Product Preview 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronou.
Rating: 1 (3 votes)
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