288M Datasheet | Specifications & PDF Download

www.DataSheet4U.com CS10 Series Ceramic Surface Mount Crystals Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:

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GS82582T19/37GE-450/400/375/333 165-Bump BGA Commercial Temp Industrial Temp 288Mb SigmaDDR-II+TM Burst of 2 SRAM 450 MHz–333 MHz 1.8 V VDD 1.8 V o

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GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.

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GS82582T20/38GE-550/500/450/400 165-Bump BGA Commercial Temp Industrial Temp 288Mb SigmaDDR-II+TM Burst of 2 SRAM 550 MHz–400 MHz 1.8 V VDD 1.8 V o

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GS8256418/36(GB/GD)-400/333/250/200 119- & 165-Bump BGA Commercial Temp Industrial Temp 16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs 400 MHz–200 MH

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Single Color 8x8 Dot Matrix Displays Part No. Digit Size Column Common Anode BM-20288MD BM-20488MD 2.30 High 5.0 BM-20488MA BM-20688MD BM-20688MA BM-2

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GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.

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PERFORMANCE PLASTIC PACKAGE ULTRA MINIATURE PURE SILICONTM CLOCK OSCILLATOR ASVMP ASVMP Pb RoHS/RoHS II compliant Moisture Sensitivity Level – MSL 1

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PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE (512K words × 18 bits × 32s banks) Description The EDR2518AB (Direct RDRAM) is a ge

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GS82582T20/38GE-550/500/450/400 165-Bump BGA Commercial Temp Industrial Temp 288Mb SigmaDDR-II+TM Burst of 2 SRAM 550 MHz–400 MHz 1.8 V VDD 1.8 V o

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GS82582TT19/37GE-450/400/375/333 165-Bump BGA Commercial Temp Industrial Temp 288Mb SigmaDDR-II+TM Burst of 2 SRAM 450 MHz–333 MHz 1.8 V VDD 1.8 V

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PERFORMANCE PLASTIC PACKAGE ULTRA MINIATURE PURE SILICONTM CLOCK OSCILLATOR ASVMP ASVMP Pb RoHS/RoHS II compliant Moisture Sensitivity Level – MSL 1

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GS82582QT20/38GE-500/450/400/375 165-Bump BGA Commercial Temp Industrial Temp 288Mb SigmaQuad-II+TM Burst of 2 SRAM 500 MHz–375 MHz 1.8 V VDD 1.8 V

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IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES  400MHz DDR operation (800Mb/s/pin d

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165-Bump BGA Commercial Temp Industrial Temp GS82582D20/38GE-550/500/450/400 288Mb SigmaQuad-II+ Burst of 4 SRAM 550 MHz–400 MHz 1.8 V VDD 1.8 V or

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165-Bump BGA Commercial Temp Industrial Temp GS82582DT21/39GE-675S/633S/550S 288Mb SigmaQuad-II+ Burst of 4 SRAM Up to 675 MHz 1.8 V VDD 1.5 V I/O

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GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.

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K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.

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IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES  400MHz DDR operation (800Mb/s/pin d

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IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES  400MHz DDR operation (800Mb/s/pin d

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