Analog Devices
HMC288MS8 - 2dB LSB GaAs MMIC
ATTENUATORS - SMT
5
5 - 34
HMC288MS8 / 288MS8E
v01.0705
2 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
Typical Applications
Features
(19 views)
Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(17 views)
Samsung semiconductor
K4C89163AF - 288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(17 views)
GSI Technology
GS8256436GD-200 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
(17 views)
ETC
BM-20288MD - LED DOT MATRIX DISPLAY
Single Color 8x8 Dot Matrix Displays
Part No. Digit Size Column Common Anode BM-20288MD BM-20488MD 2.30 High 5.0 BM-20488MA BM-20688MD BM-20688MA BM-2
(15 views)
GSI Technology
GS82582QT38GE - 288Mb SigmaQuad-II+ SRAM
GS82582QT20/38GE-500/450/400/375
165-Bump BGA Commercial Temp Industrial Temp
288Mb SigmaQuad-II+TM Burst of 2 SRAM
500 MHz–375 MHz 1.8 V VDD
1.8 V
(15 views)
GSI Technology
GS82583ET18GK - 288Mb SigmaDDR-IIIe SRAM
GS82583ET18/36GK-675/625/550/500
260-Pin BGA Commercial Temp Industrial Temp
288Mb SigmaDDR-IIIe™ Burst of 2 SRAM
Up to 675 MHz 1.3V VDD
1.2V, 1.3V
(15 views)
Samsung semiconductor
K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(14 views)
Eorex
EM47EM3288MBA - 4Gb Double DATA RATE-3 SDRAM
EM47EM3288MBA
8Gb (32M×8Bank×32) Double DATA RATE 3 Stack SDRAM
Features
• VDD/VDDQ = 1.35V -0.065/+0.1V. • Backward compatible to VDD = VDDQ = 1.5V
(14 views)
Samsung semiconductor
K4R881869M - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
(13 views)
Samsung semiconductor
K4C89093AF - 288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
(13 views)
GSI Technology
GS8256436GB-200 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
(13 views)
GSI Technology
GS8256436GB-400 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
(13 views)
GSI Technology
GS8256418GB-400 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
(13 views)
Samsung semiconductor
K4R881869D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(12 views)
Elpida Memory
UPD488588FF-C80-40 - 288M bits Direct Rambus DRAM
DATA SHEET
288M bits Direct Rambus DRAM for High Performance Solution
µPD488588FF-C80-40 (512K words × 18 bits × 32s banks)
Description
The Direct
(12 views)
Elpida Memory
EDR2518ABSE - 288M bits Direct Rambus DRAM
PRELIMINARY DATA SHEET
288M bits Direct Rambus DRAM
EDR2518ABSE (512K words × 18 bits × 32s banks)
Description
The EDR2518AB (Direct RDRAM) is a ge
(12 views)
Integrated Silicon Solution
IS49NLC18160 - 288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin d
(12 views)
GSI Technology
GS82582T38GE - 288Mb SigmaDDR-II+ SRAM
GS82582T20/38GE-550/500/450/400
165-Bump BGA Commercial Temp Industrial Temp
288Mb SigmaDDR-II+TM Burst of 2 SRAM
550 MHz–400 MHz 1.8 V VDD
1.8 V o
(12 views)
GSI Technology
GS8256436GD-333 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
(12 views)