GSI Technology
GS8256436GD-200 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(6 votes)
Samsung semiconductor
K4C89093AF - 288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
Rating:
1
★
(5 votes)
Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
Rating:
1
★
(4 votes)
Samsung semiconductor
K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
Rating:
1
★
(4 votes)
GSI Technology
GS8256436GD-400 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256436GD-333 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256418GD-333 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256436GB-200 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256418GB-250 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256418GB-200 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
GSI Technology
GS8256436GB-250 - 288Mb DCD Sync Burst SRAM
GS8256418/36(GB/GD)-400/333/250/200
119- & 165-Bump BGA Commercial Temp Industrial Temp
16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
400 MHz–200 MH
Rating:
1
★
(4 votes)
Abracon
ASVMPC-12.288MHZ-T3 - CLOCK OSCILLATOR
PERFORMANCE PLASTIC PACKAGE ULTRA MINIATURE PURE SILICONTM CLOCK OSCILLATOR ASVMP
ASVMP
Pb RoHS/RoHS II compliant
Moisture Sensitivity Level – MSL 1
Rating:
1
★
(3 votes)
ETC
BM-20288MD - LED DOT MATRIX DISPLAY
Single Color 8x8 Dot Matrix Displays
Part No. Digit Size Column Common Anode BM-20288MD BM-20488MD 2.30 High 5.0 BM-20488MA BM-20688MD BM-20688MA BM-2
Rating:
1
★
(3 votes)
Samsung semiconductor
K4R881869M-NbCcG6 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
Rating:
1
★
(3 votes)
Samsung semiconductor
K4R881869M-NCK7 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary Direct RDRAM™
288Mbit RDRAM
512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 0.9 January 2000
Page -1
Rev. 0.9
Rating:
1
★
(3 votes)
GSI Technology
GS82582QT38GE - 288Mb SigmaQuad-II+ SRAM
GS82582QT20/38GE-500/450/400/375
165-Bump BGA Commercial Temp Industrial Temp
288Mb SigmaQuad-II+TM Burst of 2 SRAM
500 MHz–375 MHz 1.8 V VDD
1.8 V
Rating:
1
★
(3 votes)
Samsung semiconductor
K4C89183AF - 288Mb x18 Network-DRAM2 Specification
www.DataSheet4U.com
K4C89183AF
288Mb x18 Network-DRAM2 Specification Version 0.7
- 1 -
REV. 0.7 Jan. 2005
K4C89183AF
Revision History
Version 0.0
Rating:
1
★
(3 votes)
Elpida Memory
EDR2518ABSE - 288M bits Direct Rambus DRAM
PRELIMINARY DATA SHEET
288M bits Direct Rambus DRAM
EDR2518ABSE (512K words × 18 bits × 32s banks)
Description
The EDR2518AB (Direct RDRAM) is a ge
Rating:
1
★
(3 votes)
Citizen
CS10-12.288MABJTR - Surface Mount Crystals
www.DataSheet4U.com
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:
Rating:
1
★
(3 votes)
Integrated Silicon Solution
IS49NLC36800 - 288Mb Common I/O RLDRAM 2 Memory
IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
JANUARY 2020
FEATURES
400MHz DDR operation (800Mb/s/pin d
Rating:
1
★
(3 votes)
