Features • Fast Read Access Time – 120 ns • .
ATMEL
28C64 - 64K 8K x 8 CMOS E2PROM
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter.
Seeq Technology
DQ28C64 - 64K Electrically EPROM
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ATMEL Corporation
AT28C64B - 64K (8K x 8) Parallel EEPROM
Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –.
STMicroelectronics
M28C64 - 64 Kbit (8K x 8) Parallel EEPROM
M28C64 64 Kbit (8K x 8) Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN s Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64.
ATMEL Corporation
AT28C64 - 64K (8K x 8) Parallel EEPROMs
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter.
ATMEL Corporation
AT28C64X - 64K (8K x 8) Parallel EEPROMs
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter.
Xicor
28C64 - E2PROM
X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern.
Catalyst Semiconductor
CAT28C64B - 64K-Bit CMOS PARALLEL E2PROM
CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby:.
ATMEL Corporation
AT28C64E - 64K (8K x 8) Parallel EEPROMs
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Cont.
STMicroelectronics
M28C64C - 64 Kbit (8Kb x8) Parallel EEPROM
M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B.
STMicroelectronics
M28C64X - 64 Kbit (8Kb x8) Parallel EEPROM
M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B.
Samsung semiconductor
KM28C64A - 8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM
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PYRAMID
PYX28C64 - 8K x 8 EEPROM
PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 m.
Xicor
X28C64 - 8K x 8-Bit Alterable E2PROM
X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern.
Microchip Technology
28C64A - 64K CMOS EEPROM
Obsolete Device 28C64A 64K (8K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active -.
Microchip Technology
28C64B - 64K CMOS EEPROM
Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –.
Turbo IC
28C64A - High Speed CMOS 64K EEPROM
Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Wr.
Catalyst Semiconductor
CAT28C64A - 64K - BIT CMOS E2PROM
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Catalyst Semiconductor
CAT28C64AI - 64K - BIT CMOS E2PROM
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PYRAMID
PYA28C64 - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.
