28C64 Datasheet | Specifications & PDF Download

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

(27 views)

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

(25 views)

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Cont

(23 views)

M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B

(23 views)

64-Kbit (8K x 8) Industrial Parallel EEPROM with Page Write and Software Data Protection AT28C64B Features • Fast Read Access Time: 150 ns • Automatic

(22 views)

X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern

(17 views)

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

(15 views)

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

(14 views)

CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby:

(13 views)

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

(11 views)

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c

(11 views)

www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufa

(11 views)

FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur

(11 views)

X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern

(10 views)

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c

(10 views)

FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current

(10 views)

Obsolete Device 28C64A 64K (8K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active -

(9 views)

www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufa

(9 views)

M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B

(8 views)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

(8 views)