E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256.
Catalyst Semiconductor
CAT28F020 - 2 Megabit CMOS Flash Memory
CAT28F020 2 Megabit CMOS Flash Memory Licensed Intel second source FEATURES s Fast read access time: 90/120 ns s Low power CMOS dissipation: – Activ.
Intel
P28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS .
AMD
Am28F020 - 2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — Access times as fa.
AMD
Am28F020A - 2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL Am28F020A 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High perfor.
Intel
N28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS .
Sharp Electrionic Components
LH28F020SU-L - 2M (256K bb 8) Flash Memory
LH28F020SU-L FEATURES 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW • 256K × 8 Bit Configuration • 5 V Write/Erase (3.3 V VCC) • Access Time – Fo.
Sharp Electrionic Components
LH28F020SU-N - 2M (256K bb 8) Flash Memory
LH28F020SU-N FEATURES 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW • 256K × 8 Bit Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requi.
Intel
E28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS .
Intel
TE28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS .
Intel
TN28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS .
Intel
28F020 - 256K x 8 CMOS FLASH MEMORY
E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Com.
Integrated Silicon Solution
IS28F020 - 262144 x 8 CMOS Flash Memory
IS28F020 IS28F020 262,144 x 8 CMOS FLASH MEMORY ISISSSII®® FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power co.
Intel
F28F020 - 2048(256 x 8) CMOS flash memory
E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Com.
Texas Instruments
TMS28F020 - 262144 BY 8-BIT FLASH MEMORY
D Organization . . . 262144 by 8-Bits D Pin Compatible With Existing 2-Megabit EPROMs D VCC Tolerance ±10% D All Inputs/Outputs TTL Compatible D M.
