N28F020 - 256K x 8 CMOS FLASH MEMORY
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase 2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µS Typical Byte-Program 4 second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read 90 ns Maximum Access Time n CMOS Low Power Consumption 10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Micropr
N28F020 Features
* ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience n JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec., Order #231369) n Exten
