N28F512 Datasheet - Intel

N28F512 512K (64K x 8) CMOS FLASH MEMORY

28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 120 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0W Data Retention Power Y Integrated Program Erase Stop Timers Y Command Register Architecture for Microprocessor Microcontroller.

N28F512 Features

* g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOX II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC (See Packaging Spec Order 231369) Y Extended Temperature Options Int

N28F512-Intel.pdf