299 Datasheet | Specifications & PDF Download

Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio

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2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Unit:

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Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features · FBET series. · Very small-sized package

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Global Mixed-mode Technology G2992B 2A DDR Bus Termination Regulator Features „ VCNTL Supply Voltage: 3V to 5.5V „ Termination Supply Voltage: 1.2V

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GS1299 General Description The GS1299 is a single-chip broadcast FM stereo radio tuner with fully integrated synthesizer, IF selectivity and MPX deco

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CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P

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NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Op

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LP2996 DDR LP2996 11 2003 20021202 24060 20020801 Chance Dunlap LP 2996 DDR DDRLP2996 DDRSD VIP DDR-I DDR-II SSTL-2 SSTL-3 HSTL DS200575 SO-8 PS

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BY296 - BY299 PRV : 100 - 800 Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low

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Features n 3/8 ˝ Square/ Multiturn / Cermet / Industrial / Sealed n Five popular terminal styles n Standoffs n RoHS compliant* version available n For

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5299 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High br

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-C

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1N5283UR-1 thru 1N5314UR-1 & 1N7048UR-1 thru 1N7055UR-1 0.5 W Current Regulators Features • High Source Impedance • Internal Metallurgical Bond • Doub

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Наимен. КД2997А КД2997Б КД2997В Uобр.,В 200 100 50 КОРПУС Iпр. max, A 30 30 30 Iобр.max, мкА Fdmax, кГц 200 100 200 100 200 100

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2299 DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Vol

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Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features · FBET series. · Very small-sized package

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CYStech Electronics Corp. High –speed double diode BAS299N3 Spec. No. : C328N3 Issued Date : 2017.04.05 Revised Date : Page No. : 1/7 Features • Sma

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