Datasheet Details
Part number:
K2996
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
408.18 KB
Description:
2sk2996.
K2996_ToshibaSemiconductor.pdf
K2996_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
K2996
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
408.18 KB
Description:
2sk2996.
K2996, 2SK2996
2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni
📁 Related Datasheet
📌 All Tags