K2996 2SK2996

Toshiba Semiconductor

Description

2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2996 DC *DC Converter, Relay Drive and Motor Drive Appl.

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Datasheet Specifications

Part number: K2996
Manufacturer: Toshiba ↗ Semiconductor
File Size: 408.18 KB
Datasheet: K2996_ToshibaSemiconductor.pdf
Description: 2SK2996

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 0.74 Ω (typ. ) z High forward transfer admittance : |Yfs| = 6.8 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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K2996 2SK2996 Toshiba Semiconductor

Toshiba Semiconductor K2996-like datasheet