2SK2996 - N-Channel MOSFET Transistor

Inchange Semiconductor

Datasheet Details

Part number	2SK2996
Manufacturer	Inchange Semiconductor
File Size	224.35 KB
Description	N-Channel MOSFET Transistor
Datasheet	2SK2996-InchangeSemiconductor.pdf

Drain Current ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Low leakage current.
High forward transfer admittance.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 2SK2996 Similar Datasheet

2SK2991 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2992 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2993 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2995 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2998 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2900-01 - N-channel MOS-FET (Fuji Electric)
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

Other Datasheets by Inchange Semiconductor

Published: Jun 26, 2016 |