ES9018K2M (ESS)
32-bit Stereo Low Power Audio DAC
Analog Reinvented
CONFIDENTIAL
ES9018K2M 32-bit Stereo Low Power Audio DAC
Datasheet
The ES9018K2M SABRE32 Reference DAC is a high-performance 32-bi
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HY29LV160TT-12 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(7 views)
HY29LV320BF-12I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(7 views)
F59L1G81MB-25BG2M (ESMT)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto
(6 views)
25Q512JVFQ (Winbond)
3V 512M-BIT SERIAL FLASH MEMORY
W25Q512JV
3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
Publication Release Date: June 25, 2019 -Revision B
W25Q512JV
Table of Contents
1. GENER
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HY29LV160BF-12 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160BF-90 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160TT-12I (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160TT-70 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV320BF-70 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(5 views)
HY29LV320BF-70I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(5 views)
HY29LV320BF-80 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(5 views)
F50D2G41LB-50YG2M (ESMT)
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
ESMT
Flash
(Preliminary)
F50D2G41LB (2M)
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Co
(5 views)
MBM29DL324TD-80 (Fujitsu)
32M (4M x 8/2M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.
(4 views)
MBM29DL324BD-12 (Fujitsu)
32M (4M x 8/2M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.
(4 views)
HY29LV160TT-70I (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(4 views)
HY29LV320BF-90I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(4 views)
HY29LV320BT-70 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(4 views)
K4S563233FHN75 (Samsung semiconductor)
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233F - F(H)E/N/G/C/L/F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add
(4 views)
LC33832M (Sanyo)
256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
(4 views)
