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K4S563233FHN75

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S563233FHN75 Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S563233FHN75 General Description

The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S563233FHN75 Datasheet (140.87 KB)

Preview of K4S563233FHN75 PDF

Datasheet Details

Part number:

K4S563233FHN75

Manufacturer:

Samsung semiconductor

File Size:

140.87 KB

Description:

2m x 32bit x 4 banks mobile sdram in 90fbga.

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TAGS

K4S563233FHN75 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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