K4S563233FHN75 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

Description

K4S563233F - F(H)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4S563233FHN75
Manufacturer: Samsung semiconductor
File Size: 140.87 KB
Datasheet: K4S563233FHN75_Samsungsemiconductor.pdf
Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4S563233F-F(H)E/N/G/C/L/F60 K4S563233F-F(H)E/N/G/C/L/F75 K4S563233F-F(H)E/N/G/C/L/F1H K4S563233F-F(H)E/N/G/C/L/F1L Max Freq. 166MHz(CL=3) 133MHz(CL=3),111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1 LVCMOS 90 FBGA Pb (Pb Free) Interface Package - F(H)E/N/G : Normal/Low

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K4S563233FHN75 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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