K4S563233FHN75 Datasheet, 90fbga, Samsung semiconductor

K4S563233FHN75 Features

• 90fbga
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (

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Part number:

K4S563233FHN75

Manufacturer:

Samsung semiconductor

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140.87kb

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📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram in 90fbga. The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

K4S563233FHN75 Application

• Applications ORDERING INFORMATION Part No. K4S563233F-F(H)E/N/G/C/L/F60 K4S563233F-F(H)E/N/G/C/L/F75 K4S563233F-F(H)E/N/G/C/L/F1H K4S563233F-F(H)E

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K4S563233FHN75

Samsung semiconductor

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