K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

K4S56323LF-FE Datasheet Preview — Preview of K4S56323LF-FE PDF

Datasheet Details

Part number	K4S56323LF-FE
Manufacturer	Samsung semiconductor
File Size	170.16 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4S56323LF-FE_Samsungsemiconductor.pdf

K4S56323LF-FE Product details

Description

The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Par.

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Other Datasheets by Samsung semiconductor

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Published: Apr 4, 2010 |