K4S56323LF-FHE Datasheet, Sdram, Samsung semiconductor

K4S56323LF-FHE Features

• Sdram
• VDD/VDDQ = 2.5V/2.5V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2

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Part number:

K4S56323LF-FHE

Manufacturer:

Samsung semiconductor

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170.16kb

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📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram. The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

K4S56323LF-FHE Application

• Applications ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H K4S56323LF-F(H)E

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K4S56323LF-FHE

Samsung semiconductor

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