K4S56323LF-FHE

2M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Download Datasheet (170.16 KB)

K4S56323LF-FHE Datasheet Preview — Preview of K4S56323LF-FHE Datasheet

Datasheet Details

Part number:

K4S56323LF-FHE

Manufacturer:

Samsung semiconductor

File Size:

170.16 KB

Description:

2m x 32bit x 4 banks mobile sdram.
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES * VDD/VDDQ = 2.5V/.
The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152.

✔ K4S56323LF-FHE Features

VDD/VDDQ = 2.5V/2.5V
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst le

✔ K4S56323LF-FHE Application

ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N

📁 Related Datasheet

K4S56323LF-FHC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHL - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHN - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHR - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHS - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

TAGS

K4S56323LF-FHE 32Bit Banks Mobile SDRAM Samsung semiconductor

Image Gallery

Datasheet Details

File Size:

Description:

✔ K4S56323LF-FHE Features

✔ K4S56323LF-FHE Application

K4S56323LF-FHE Distributor