K4S56323LF-FHS, K4S56323LF-FE Datasheet - Samsung semiconductor

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K4S56323LF-FHS, K4S56323LF-FE 2M x 32Bit x 4 Banks Mobile SDRAM

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

K4S56323LF-FE_Samsungsemiconductor.pdf

K4S56323LF-FHS Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S56323LF-FHS, K4S56323LF-FE. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S56323LF-FHS, K4S56323LF-FE

Manufacturer:

Samsung semiconductor

File Size:

170.16 KB

Description:

2M x 32Bit x 4 Banks Mobile SDRAM

Note:

This datasheet PDF includes multiple part numbers: K4S56323LF-FHS, K4S56323LF-FE.
Please refer to the document for exact specifications by model.

Features

* VDD/VDDQ = 2.5V/2.5V
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with

Applications

* ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H K4S56323LF-F(H)E/N/S/C/L/R1L Max Freq. 166MHz(CL=3) 133MHz(CL=3),111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1 LVCMOS 90 FBGA Pb (Pb Free) Interface Package - F(H)E/N/S : Normal/Low

K4S56323LF-FHS Distributors

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K4S56323LF-FE 32Bit Banks Mobile SDRAM Samsung semiconductor

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