K4S56323LF-FHR Datasheet, Sdram, Samsung semiconductor

K4S56323LF-FHR Features

• Sdram
• VDD/VDDQ = 2.5V/2.5V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2

PDF File Details

Part number:

K4S56323LF-FHR

Manufacturer:

Samsung semiconductor

File Size:

170.16kb

Download:

📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram. The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

K4S56323LF-FHR Application

• Applications ORDERING INFORMATION Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H K4S56323LF-F(H)E

TAGS

K4S56323LF-FHR

Samsung semiconductor

📁 Related Datasheet

K4S56323LF-FHC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHE - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHL - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHN - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FHS - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FC - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FL - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FN - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..

K4S56323LF-FR - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with multiplexed address..