Datasheet Details
Part number:
K4S563233F
Manufacturer:
Samsung semiconductor
File Size:
140.87 KB
Description:
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Features
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
K4S563233F_Samsungsemiconductor.pdf
K4S563233F, 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S563233F Distributor
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