2M-Bit Datasheet | Specifications & PDF Download

a FEATURES Two 12-Bit/14-Bit DACs with Output Amplifiers AD7242: 12-Bit Resolution AD7244: 14-Bit Resolution On-Chip Voltage Reference Fast Settling T

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MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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a FEATURES Complete Dual 12-Bit DAC Comprising Two 12-Bit CMOS DACs On-Chip Voltage Reference Output Amplifiers Reference Buffer Amplifiers Improved A

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTI

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PY25Q32HB Datasheet PY25Q32HB Ultra-Low Power, 32M-bit Serial Multi I/O Flash Memory Datasheet Feb. 20, 2023 Performance Highlight  Supply Range from

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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a FEATURES Two 12-Bit MDACs with Output Amplifiers 4-Quadrant Multiplication Space-Saving 0.3 , 24-Lead DIP and 24-Terminal SOIC Package Parallel Loa

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K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History

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www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM

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K4M28163LF - R(B)E/N/S/C/L/R 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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