ES9018K2M (ESS)
32-bit Stereo Low Power Audio DAC
Analog Reinvented
CONFIDENTIAL
ES9018K2M 32-bit Stereo Low Power Audio DAC
Datasheet
The ES9018K2M SABRE32 Reference DAC is a high-performance 32-bi
(17 views)
HY29LV160TT-12 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(7 views)
HY29LV320BF-12I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(7 views)
HY29LV320BF-70 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(6 views)
F59L1G81MB-25BG2M (ESMT)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto
(6 views)
25Q512JVFQ (Winbond)
3V 512M-BIT SERIAL FLASH MEMORY
W25Q512JV
3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
Publication Release Date: June 25, 2019 -Revision B
W25Q512JV
Table of Contents
1. GENER
(6 views)
T25S32 (First-Rank Technology)
32M-BIT SPI NOR FLASH
Shenzhen First-Rank Technology Co., Ltd
SPECIFICATION
T25S32
Version 2.0
reserves the right to change this documentation without prior notice.
Shenz
(6 views)
HY29LV160BF-12 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160BF-90 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160TT-12I (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV160TT-70 (Hynix Semiconductor)
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
HY29LV160
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.
(5 views)
HY29LV320BF-70I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(5 views)
HY29LV320BF-80 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(5 views)
M12L128168A-7BG2N (ESMT)
2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key
(5 views)
F50D2G41LB-50YG2M (ESMT)
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
ESMT
Flash
(Preliminary)
F50D2G41LB (2M)
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Co
(5 views)
25Q32FVSIG (Winbond)
3V 32M-BIT SERIAL FLASH MEMORY
W25Q32FV
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: October 20, 2015 Revision I
W25Q32FV
Table of Contents
1.
(5 views)
FM25F02A (Fudan)
2M-BIT SERIAL FLASH MEMORY
FM25F02A 2M-BIT SERIAL FLASH MEMORY
Datasheet
Dec. 2014
FM25F02A 2M-BIT SERIAL FLASH MEMORY
Ver 1.3
Datasheet 1
INFORMATION IN THIS DOCUMENT IS IN
(4 views)
AT49LV1614A (ATMEL Corporation)
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •
(4 views)
MBM29DL324TD-80 (Fujitsu)
32M (4M x 8/2M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.
(4 views)
MBM29DL324BD-12 (Fujitsu)
32M (4M x 8/2M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.
(4 views)
