.
STMicroelectronics
M28W320FSB - 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories
www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories.
Hynix Semiconductor
H55S5122EFR - 512Mbit (16Mx32bit) Mobile SDR Memory
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
ST Microelectronics
M74DW66500B - 2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
www.DataSheet4U.com M74DW66500B 2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Produc.
Hanbit
HMN12816D - Non-Volatile SRAM MODULE 2Mbit
www.DataSheet4U.com HANBit HMN12816D Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V Part No. HMN12816D GENERAL DESCRIPTION The HMN12.
STMicroelectronics
M28W640FSB - 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories
www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories.
Hynix Semiconductor
H55S5132EFR-75M - 512Mbit (16Mx32bit) Mobile SDR Memory
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
Chingis Technology
Pm25LQ032C - 32Mbit Single Operating Voltage Serial Flash Memory
Pm25LQ032C FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Memory Organization - Pm25LQ032C: 4096K x 8 (32 Mbit) • Cost.
ISSI
IS25LD020 - 512Kbit / 1Mbit / 2Mbit Single Operating Voltage Serial Flash Memory
IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Output SPI B.
ISSI
IS25CD512 - 512Kbit / 1Mbit / 2Mbit Single Operating Voltage Serial Flash Memory
IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Output SPI B.
ISSI
IS25CD010 - 512Kbit / 1Mbit / 2Mbit Single Operating Voltage Serial Flash Memory
IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Output SPI B.
Infineon
HYB25D512160BE - 512Mbit Double Data Rate SDRAM
Data Sheet, Rev. 1.2, June 2004 HYB25D512[40/80/16]0B[C/T] HYB25D512[40/80/16]0B[E/F] 512Mbit Double Data Rate SDRAM DDR SDRAM Memory Products Never s.
Infineon Technologies AG
HYB25D512160AT - 512Mbit Double Data Rate SDRAM
D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 0 0 4 HYB25D512400AT HYB25D512800AT HYB25D512160AT 512Mbit Doubl e Data Rat e SDRAM DDR SDRAM M e m o.
Infineon Technologies AG
HYB25D512400AT - 512Mbit Double Data Rate SDRAM
D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 0 0 4 www.DataSheet4U.com HYB25D512400AT HYB25D512800AT HYB25D512160AT 512Mbit Doubl e Data Rat e SDRA.
Infineon Technologies AG
HYB25D512800AT - 512Mbit Double Data Rate SDRAM
Data Sheet, Rev. 1.0, March 2004 HYB25D512400AT HYB25D512800AT HYB25D512160AT 512Mbit Double Data Rate SDRAM DDR SDRAM Memory Products Never stop thin.
Samsung semiconductor
K4S511632M-TC - 512Mbit SDRAM
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.
Samsung semiconductor
K4S511632M-TL1L - 512Mbit SDRAM
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.
Hanbit Electronics
HMN4M8DN - Non-Volatile SRAM MODULE 32Mbit
www.DataSheet4U.com HANBit HMN4M8DV(N) Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V Part No. HMN4M8DV(N) GENERAL DESCRIPTION .
Samsung semiconductor
K4Y50024UC - (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T.
Samsung semiconductor
K4S510432M - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M Preliminary CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec. 2001 Samsung El.
Samsung semiconductor
K4S510732B - Stacked 512Mbit SDRAM
Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.0 Feb. 2001 * S.