2N3789 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,

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2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to N

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PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor

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SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: h

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2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

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