2N3789 Datasheet | Specifications & PDF Download

2N3789 Silicon PNP Power Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·Ex.

2N3789 (Toshiba)

SILICON PNP Transistor

SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: h

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2N3789 (Motorola)

PNP Transistor

2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to N

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2N3789 (Inchange Semiconductor)

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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2N3789 (Seme LAB)

Bipolar PNP Device

2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

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2N3789 (Central Semiconductor)

PNP POWER TRANSISTORS

2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,

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2N3789 (Comset Semiconductor)

EPITAXIAL-BASE TRANSISTORS

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor

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