2N5665 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device

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2N5664, 2N5665, 2N5666, 2N5667 NPN High Voltage Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500

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TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2

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2N5665 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetica

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown volta

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