2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SIL.
2N6278 - HIGH-POWER NPN SILICON TRANSISTORS
2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit appli.2N6278 - Bipolar NPN Device
www.DataSheet4U.com 2N6278 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.1.2N6278 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device .