2N7002A Datasheet | Specifications & PDF Download

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Product Summary V(BR)DSS 60V RDS(ON) max 6Ω @ VGS = 5V ID max TA = +25°C 200mA Description and Applications This MOSFET is designed to meet the st

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NEW PRODUCT Product Summary BVDSS 60V RDS(ON) Max 6Ω @ VGS = 5V ID Max TA = +25°C 220mA Description and Applications This MOSFET has been designe

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Description AP2N7002AL 60V N-Channel Enhancement Mode MOSFET The AP2N7002AL uses advanced trench technology to provide excellent RDS(ON), low gate c

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GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have

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T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications • ESD protected gate • Low ON-res

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Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Se

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