2SA1201 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • H

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UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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2SA1201G Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ，,, 2SC2881G 。。

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WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SA12T0H1RU FM1200-

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2SA1201 PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES z High voltage z High transition fr

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Plastic-Encapsulate Transistors FEATURES z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881 Pb Lead-free Pro

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1201 FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) 2. COLLECTOR 3.

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2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise note

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SMD Type Voltage Amplifier Applications 2SA1201 Transistors Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small

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