2SA1358-Z Datasheet | Specifications & PDF Download

2SA1358-Z PNP Transistor

isc Silicon PNP Power Transistor 2SA1358-Z DESCR.

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Complement to Type 2SC3421 ·Minimum Lo

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1358 Audio Frequency Power Amplifier Applications 2SA1358 Unit: mm • Complementary to

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isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation

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