Power Transistor (−50V, −3A) 2SA1797 zFeature.
2SA1797 - PNP Transistor
Elektronische Bauelemente 2SA1797 -2A, -50V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.2SA1797 - Plastic-Encapsulate Transistors
WILLAS SOT-89 Plastic-Encapsulate Transistors 2SA1797 TRANSISTOR (PNP) FEATURES Low saturation voltage Excellent DC current gain characteristics Pb-.2SA1797 - Silicon PNP transistor
2SA1797 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC4672 。 Lo.2SA1797 - POWER TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / I.2SA1797-Q - PNP Silicon Power Transistors
2SA1797-P/2SA1797-Q Features • Complements to 2SC4672 • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 .2SA1797-P - PNP Silicon Power Transistors
2SA1797-P/2SA1797-Q Features • Complements to 2SC4672 • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 .2SA1797 - Power Transistor
Power Transistor (−50V, −3A) 2SA1797 zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current .2SA1797U - PNP Transistor
2SA1797U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collect.2SA1797 - Power Transistor
SMD Type Power Transistor 2SA1797 Transistors Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. Excellent DC current gai.2SA1797 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1797 TRANSISTOR (PNP) FEATURES z Low saturation volta.2SA1797 - PNP Transistor
Plastic-Encapsulate Transistors FEATURES • Low saturation voltage • Excellent DC current gain characteristics • Complements to 2SC4672 Maximum Ratin.2SA1797 - PNP Transistor
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). Excell.