2SB674 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)=

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: B673 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB674 DESCRIPTION ·With TO-220C package ·DARLINGTO

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