2SB677 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltag

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER AP

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB677 DESCRIPTION ·With TO-220C package ·DARLINGTO

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