
2SC2812 (GME)
Silicon Epitaxial Planar Transistor
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).
z High Voltage:VCEO=50V
(30 views)
Production specification Silicon Epitaxial Planar.
Silicon Epitaxial Planar Transistor
PNP / NPN Epitaxial Planar Silicon Transistors
Silicon NPN transistor
PNP / NPN Epitaxial Planar Silicon Transistors
Bipolar Transistor
2SC2812 Distributor