2SC3303 Datasheet | Specifications & PDF Download

Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).  High speed switching time:tstg=1us(typ). Pb Lea

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isc Silicon NPN Power Transistor DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% aval

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Elektronische Bauelemente 2SC3303 5A , 100V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications Indust

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2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications Indust

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