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2SC3303 Datasheet | Specifications & PDF Download

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2SC3303 NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente 2SC3303 5A , 100V NPN E.

Toshiba Logo

C3303 (Toshiba)

2SC3303

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications Indust
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2SC3303 (GME)

Silicon NPN Transistor

Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).  High speed switching time:tstg=1us(typ). Pb Lea
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