2SC388 Datasheet | Specifications & PDF Download

Transistors 2SC388

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2SC388 TRANSISTOR (NPN) FEATURES TV final pictureif amplifier applications TO-92 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLL

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isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION ·High Breakdown Voltage- : VCEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variation

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : VCBO= 1400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for rob

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IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·Hig

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IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175

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isc Silicon NPN Power Transistor 2SC3886 DESCRIPTION ·High Breakdown Voltage- : VCEO= 600V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variation

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION ·With TO-3P(H)IS package ·High

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for ro

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥

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2SC388ATM(BR3DG388ATMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features :Gpe=

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