2SC495 Datasheet | Specifications & PDF Download

Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4953 DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% av

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DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain

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DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, Hi

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DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain

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DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, Hi

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DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • Low Nois

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DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • Low Nois

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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