Panasonic
C4953 - 2SC4953
Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
Rating:
1
★
(4 votes)
Panasonic Semiconductor
2SC4953 - NPN Transistor
Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
Rating:
1
★
(3 votes)
Toshiba
C495 - 2SC495
:
I
2SC496,
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : v CE(sat)
Rating:
1
★
(3 votes)
INCHANGE
2SC4953 - NPN Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4953
DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% av
Rating:
1
★
(3 votes)
NEC
2SC4954 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain
Rating:
1
★
(2 votes)
NEC
2SC4955 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain
Rating:
1
★
(1 votes)
NEC
2SC4956 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise, Hi
Rating:
1
★
(1 votes)
NEC
2SC4957 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4957
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise, Hi
Rating:
1
★
(1 votes)
NEC
2SC4958 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4958
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
FEATURES
• • •
Low Nois
Rating:
1
★
(1 votes)
NEC
2SC4959 - NPN TRANSISTOR
DATA SHEET
SILICON TRANSISTOR
2SC4959
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
FEATURES
• • •
Low Nois
Rating:
1
★
(1 votes)
Toshiba
2SC495 - Silicon NPN Transistors
:
I
2SC496,
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : v CE(sat)
Rating:
1
★
(1 votes)
Renesas
2SC4957 - NPN EPITAXIAL SILICON RF TRANSISTOR
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor
Rating:
1
★
(1 votes)
