| Part Number |
Description |
Manufacture |
PDF |
|
2SC5129 |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Toshiba Semiconductor
|
|
|
2SC5125 |
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Mitsubishi Electric Semiconductor
|
|
|
2SC5129 |
Horizontal Deflection Output
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Toshiba
|
|
|
2SC5122 |
Silicon NPN Triple Diffused Type TRANSISTOR
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Toshiba Semiconductor
|
|
|
2SC5124 |
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Sanken electric
|
|
|
2SC5129 |
SILICON POWER TRANSISTOR
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
SavantIC
|
|
|
2SC5121 |
Silicon NPN triple diffusion planar type
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Panasonic Semiconductor
|
|
|
2SC5128 |
Silicon NPN triple diffusion planar type
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Panasonic Semiconductor
|
|
|
2SC5124 |
SILICON POWER TRANSISTOR
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
SavantIC
|
|
|
2SC5127 |
Silicon NPN triple diffusion planar type
Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2. |
Panasonic Semiconductor
|
|
