Power Transistors 2SC5517 Silicon NPN triple dif.
INCHANGE
2SC5517 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in.
Panasonic Semiconductor
2SC5517 - NPN Transistor
Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5).