2SC6076 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation V

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low c

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