2SD1535 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-

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Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Wide a

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