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Sanyo Semicon Device
2SD1912 - NPN Epitaxial Planar Silicon Transistor
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Inchange Semiconductor
2SD1912 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Sa.
Inchange Semiconductor
D1912 - 2SD1912
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C.