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2SD2016 Datasheet | Specifications & PDF Download

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2SD2016 Silicon NPN Transistor

2SD2016 Darlington Equivalent C circuit B (2kΩ).

Sanken electric

2SD2016 - Silicon NPN Transistor

2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Pur.
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Allegro

D2016 - 2SD2016

www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V.
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INCHANGE

2SD2016 - NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Vol.
Rating: 1 (1 votes)
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