2SD2016 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V

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2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Pur

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Vol

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