Darlington 2SD2081 sElectrical Characteristics Sy.
2SD2081 - Silicon NPN Transistor
Darlington 2SD2081 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5.2SD2081 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complem.