isc Silicon NPN Darlington Power Transistor DESCRI.
Inchange Semiconductor
2SD2161 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000.
NEC
D2161 - 2SD2161
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
NEC
2SD2161 - NPN Transistor
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
