2SD2250 Datasheet | Specifications & PDF Download

Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 φ 3.3±0.2 5.0±0.3 3.0

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Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 φ 3.3±0.2 5.0±0.3 3.0

Rating: 1 ★ (2 votes)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000

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