2SD363 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CE

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)

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