2SD640 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collect

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: 2SD640 I SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICAT

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