isc Silicon NPN Darlington Power Transistor DESCR.
INCHANGE
2SD687 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR.
Toshiba
2SD687 - Silicon NPN Transistor
2SD687 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLI.
SavantIC
2SD687 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD687 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low coll.
