2SD882U-P Datasheet | Specifications & PDF Download

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plast

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A ·Go

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ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plast

(10 views)