2SD90 Datasheet | Specifications & PDF Download

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isc Silicon NPN Power Transistor 2SD904 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low C

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD909 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltag

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isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·M

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