2SJ526 Silicon P Channel MOS FET High Speed Power .
INCHANGE
2SJ526 - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V ·Fast Switching Speed ·Low drive current ·100% avalanche .
Hitachi Semiconductor
2SJ526 - Silicon P-Channel MOSFET
2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ.
