SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLIC.
Toshiba Semiconductor
K118 - 2SK118
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications .
Toshiba Semiconductor
2SK1120 - N-Channel MOSFET
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−sourc.
Hitachi Semiconductor
2SK1151L - Silicon N-Channel MOSFET
2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch.
Inchange Semiconductor
2SK1118 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot.
Renesas
2SK1158 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Panasonic Semiconductor
2SK1103 - Silicon N-Channel Junction FET
Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15 .
Toshiba Semiconductor
2SK1119 - N-Channel MOSFET
2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−sour.
Toshiba Semiconductor
K1119 - 2SK1119
2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−sour.
Hitachi Semiconductor
2SK1154 - Silicon N-Channel MOSFET
2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1155 - Silicon N-Channel MOSFET
2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1156 - Silicon N-Channel MOSFET
2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1158 - Silicon N-Channel MOSFET
2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1161 - Silicon N-Channel MOSFET
2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1162 - Silicon N-Channel MOSFET
2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1165 - Silicon N-Channel MOSFET
2SK1165, 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Toshiba Semiconductor
K117 - 2SK117
2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • • • • High |Yfs|: |Yfs| = 15 m.
Renesas
2SK1155 - Silicon N Channel MOSFET
2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Fea.
Renesas
2SK1161 - Silicon N-Channel MOSFET
2SK1161, 2SK1162 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.
Kexin
2SK1133 - N-Channel MOSFET
SMD Type ■ Features ● VDS (V) = 50V ● ID = 100 mA ● RDS(ON) ＜ 50Ω (VGS = 4V ) ● Complments the 2SJ166 N-Channel MOSFET 2SK1133 SOT-23 2.9 +0.1 -0..
