2SK1629 Datasheet | Specifications & PDF Download

2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)

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2SK1628, 2SK1629 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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isc N-Channel MOSFET Transistor 2SK1629 ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variat

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