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2SK180 datasheet

2SK180 datasheet

2SK180 Power FET

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Yoshino International

2SK180 - Power FET

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1.0 · rating-1
Toshiba

K1805 - 2SK1805

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1.0 · rating-1
Yoshino International

2SK182 - (2SK180 - 2SK183) Power FET

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1.0 · rating-1
Renesas

2SK1807 - Silicon N-Channel MOSFET

 2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .
1.0 · rating-1
Inchange Semiconductor

2SK1805 - N-Channel MOSFET Transistor

 isc N-Channel MOSFET Transistor 2SK1805 DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min.
1.0 · rating-1
Yoshino International

2SK181 - (2SK180 - 2SK183) Power FET

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1.0 · rating-1
Yoshino International

2SK183 - (2SK180 - 2SK183) Power FET

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1.0 · rating-1
Hitachi Semiconductor

2SK1807 - N-Channel MOSFET

 2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
1.0 · rating-1
Hitachi Semiconductor

2SK1808 - N-Channel MOSFET

 2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
1.0 · rating-1
Hitachi Semiconductor

2SK1809 - N-Channel MOSFET

 2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
1.0 · rating-1
Inchange Semiconductor

2SK1809 - N-Channel MOSFET Transistor

 isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resis.
1.0 · rating-1
Inchange Semiconductor

2SK1807 - N-Channel MOSFET Transistor

 isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed ·Min.
1.0 · rating-1
Inchange Semiconductor

2SK1803 - N-Channel MOSFET Transistor

 isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot.
1.0 · rating-1
Panasonic

2SK1803 - Silicon N-Channel MOSFET

 Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee.
1.0 · rating-1
Hitachi Semiconductor

K1808 - 2SK1808

 2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .
1.0 · rating-1
Hitachi Semiconductor

K1807 - 2SK1807

 2SK1807 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch.
1.0 · rating-1
Toshiba

2SK1805 - Field Effect Transistor

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1.0 · rating-1
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