2SK208 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 2SK2082-01 DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed

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2SK2082-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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isc N-Channel MOSFET Transistor 2SK2080-01 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed

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2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Appli

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isc N-Channel MOSFET Transistor 2SK2080 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·M

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2SK2084(L), 2SK2084(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK2081-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK2084(L), 2SK2084(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK2084(L), 2SK2084(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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